Abstract
Vertical bipolar inter-company (VBIC) and high current model (HICUM) have been applied for dc modeling of state-of-the-art SiGe-HBTs. The models include improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating. Several dc parameters of the devices have been extracted from SiGe-HBTs and implemented in the VBIC and HICUM models. A comparison is made also with the SGP model. The usefulness and accuracy of the VBIC and HICUM models for SiGe-HBTs are demonstrated by way of comparison of simulated and measured room temperature device dc data.
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