Abstract

The results from femtosecond four-wave-mixing experiments carried out in two-dimensional gas at the GaAs/AlGaAs heterojunction boundary under room temperature conditionsare presented. The obtained values of the spin and electron diffusion coefficients are 163.2 and 200 cm2/s respectively. The spin and electron relaxation times are found to be 50.7 ps and 3 ns respectively.

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