Abstract
The results from femtosecond four-wave-mixing experiments carried out in two-dimensional gas at the GaAs/AlGaAs heterojunction boundary under room temperature conditionsare presented. The obtained values of the spin and electron diffusion coefficients are 163.2 and 200 cm2/s respectively. The spin and electron relaxation times are found to be 50.7 ps and 3 ns respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Bulletin of the Russian Academy of Sciences: Physics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.