Abstract
Ce doped Bi12SiO20 single crystals were grown either on board of the Chinese Spacecraft-Shenzhou No.3 (SZ-3) or on the ground at the same conditions with the exception of microgravity. The surface morphology of crystals clearly showed significant differences between the space- and ground-grown portions. The space- and ground-grown crystals have been measured by X-ray rocking curve, Ce concentration distribution in growth direction, dislocation density, absorption spectrums. These results show that the compositional homogeneity and structural perfection of Ce doped crystal grown in space are obviously improved.
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