Abstract
This work quantitatively compares soft breakdown identification methods for constant voltage stress of large-area nMOS capacitors (up to 10 mm/sup 2/) with 1.8- to 12-nm gate-oxide thickness (with negative gate voltage). We conclude that in the studied range, breakdown is identified more reliably with a current step trigger than through increased current fluctuation. We present a method to quantify the system background noise, and show results of data filtering algorithms that significantly enhance the ratio between the breakdown signal and background noise level.
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More From: IEEE Transactions on Device and Materials Reliability
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