Abstract
Ultra-thin body with ultra-thin buried oxide (UTBB) n-channel devices on silicon-on-insulator platform with and without ground plane are characterised over a wide frequency range. Self-heating effect and source-to-drain coupling through the substrate clearly manifest themselves through the output conductance variation with frequency. In this work, we experimentally show that introduction of a p-type ground plane (GP) significantly reduces output conductance degradation with frequency and results in improved analogue performance comparing with devices without GP.
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