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Abstract
The electrical properties of silicon dioxide (thermal oxidation) and aluminum nitride (metal organic chemical vapor deposition) have been compared for use as gate dielectric for silicon carbide metal insulator semiconductor structures. High frequency capacitance voltage measurements at room temperature were used to investigate fixed charge and deep interface states. The deep interface states could be passivated with hydrogen if introduced during growth of silicon dioxide. Although results are promising for aluminum nitride, the morphology of the films grown so far do not allow a fair comparison with silicon dioxide.
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