Abstract
The electrical properties of plane field-effect transistors with different assumed impurity-atom distributions in their channel regions, corresponding to either an alloyed- or a diffused-gate p-n junction, are compared with those of the cylindrical type, with a uniform distribution of impurities in the channel. It is shown that the electrical properties of different types of field-effect transistors with the same pinchoff voltage and transconductance are quite similar.
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