Abstract

A comparison of two multilayer resist systems is presented here by evaluation on a metal lift‐off application. A silicon containing resist and the chemical silylation of imaged resist are characterized for use in metal lift‐off. The materials and process details are described. Both methods show adequate performance for the application studied here. However, the thermal stability of the silicon resist is questionable for metal deposition and thus requires UV hardening which complicates this bilayer process. Conversely, silylation of imaged resist simultaneously hardens the material but requires this extra step to impart oxygen plasma resistance.

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