Abstract
This paper presents results attained with SiC GTO thyristors terminated by a single step and a graded etched JTE. The comparison of both types of devices reveals no significant difference in the on-state and switching characteristics but a higher blocking capability of some thyristors with the latter kind of termination. The best devices showed a forward breakdown voltage of nearly 6 kV, which is a distinct progress as against previous results of thyristors with a graded etched JTE. Furthermore, such GTO thyristors have been characterized dynamically for the first time.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
