Abstract
We have compared the short-channel effects (SCE) in triple-gate MOSFETs fabricated on SOI and strained SOI (sSOI) substrates. The triple-gate sSOI MOSFETs exhibit high gain in mobility but show earlier threshold voltage roll-off than unstrained devices. This indicates that the low effective mass and the narrow band-gap, due to tensile stress in sSOI substrate, increase the junction and gate tunneling leakage current and hence enhance the SCE. The off-current of sSOI device at Vg = 0 is one order of magnitude higher than that of SOI device, decreasing the on/off current ratio. The subthreshold slope of sSOI device is also affected. The stronger short-channel effect in sSOI device is correlated with a more intense channel-to-substrate coupling.
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