Comparison of self-heating effects in bulk-silicon and SOI high-voltage devices

Abstract

A study of the self-heating effect in SOI and bulk-Si power devices which were subjected to large transient power overloads is described. The time-dependent temperature rise and decay was measured and compared in the two device types by relating the transient on-resistance of the device to its temperature. The temperature rise in SOI devices is shown to be more rapid than in bulk-Si devices in the initial stage of the power pulse. With extended pulse duration the difference between the temperature rise in SOI and bulk-Si devices converges to a constant value which is proportional to the thickness of the buried oxide. This difference is relatively small in comparison to the overall temperature rise. >