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Abstract
The electrical properties of identically fabricated PtOx Schottky contacts on -oriented gallium oxide thin films and bulk crystals were investigated using current–voltage measurements at room temperature. The homogeneous barrier height of the Schottky contacts on thin films is 1.55 ± 0.15 eV, which is significantly smaller than that of those fabricated on bulk single crystals, 2.01 ± 0.12 eV. This large difference indicates an upward band bending of 0.4–0.5 eV at the surface of the bulk crystals in the as-received state, which is explained by the larger net doping density of the thin films compared to the single crystals.
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