Abstract
A simulation comparison of MOSFET and double-metal-plate capacitive techniques for vibration detection of MEMS resonator and sensor applications is reported. A novel resonant suspended-gate MOSFET (RSG-MOSFET) analytical model is developed and used for simulating the mechanical and electrical behaviour of the resonant device under electrostatic actuation. It is demonstrated that a MOS-based detection offers signal amplification advantages over conventional capacitive detection especially for narrow beam resonators.
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