Comparison of residual stress measurement in thin films using surface micromachining method

Abstract

Conductive, dielectric, semiconducting, piezoelectric and ferroelectric thin films are extensively used for MEMS/NEMS applications. One of the important parameters of thin films is residual stress. The residual stress can seriously affect the properties, performance and long-term stability of the films. Excessive compressive or tensile stress results in buckling, cracking, splintering and sticking problems. Stress measurement techniques are therefore essential for both process development and process monitoring. Many suggestions for stress measurement in thin films have been made over the past several decades. This paper is concentrated on the in situ stress measurement using surface micromachining techniques to determine the residual stress. The authors review and compare several types of stress measurement methods including buckling technique, rotating technique, micro strain gauge and long–short beam strain sensor.