Abstract
The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 μm were investigated by temperature-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but saturate faster as the excitation is increased, due to the lower density of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs.
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