Comparison of Quantum Corrections for Monte Carlo Simulation

Abstract

As semiconductor devices are scaled down to nanometer scale dimensions, quantum mechanical effects can become important. For many device simulations at normal temperatures, an efficient quantum correction approach within a semi-classical framework is expected to be a practical way applicable to multi-dimensional simulation of ultrasmall integrated devices. In this paper, we present a comparative study on the three quantum correction methods proposed to operate within the Monte Carlo framework, which are based on Wigner transport equation, path integrals, and Schrodinger equation. Quantitative comparisons for the strengths and weaknesses of these methods are discussed by applying them to size quantization and tunneling effects.