Abstract
Recently two new techniques, pulsed electron beam annealing and pulsed laser annealing have been developed for processing ion-implanted silicon. These two types of anneals have been compared using ionchanneling, ion back-scattering, and transmission electron microscopy (TEM). Single crystal samples were implanted with 100 keV As+ ions to a dose of ~ 1 × 1016 ions/cm2 and subsequently annealed by either a pulsed Ruby laser or a pulsed electron beam. Our results show in both cases that the near-surface region has melted and regrown epitaxially with nearly all of the implanted As (97-99%) incorporated onto lattice sites. The analysis indicates that the samples are essentially defect free and have complete electrical recovery.
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