Abstract
Displacement damage induced carrier removal rates for proton irradiations in the energy range 10-175 MeV were compared to 1 MeV equivalent neutrons using power MOSFETs as a test vehicle. The results showed that, within experimental error, the degradation mechanisms were qualitatively similar and the ratio of proton to neutron carrier removal rates as a function of proton energy correlate with a calculation based on nonionization energy loss in silicon. For exposures under junction bias, p-type silicon was found to have a smaller carrier removal rate for both proton and neutron irradiations, whereas, for n-type silicon, junction bias had little effect on the carrier removal rate.
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