Abstract
This article compares properties of two measurement set-ups dedicated to determining thermal parameters of power LEDs. The standard T3Ster set-up and the custom set-up developed in Gdynia Maritime University are considered. Both set-ups are described and the used measurement procedure is presented. The manner of measurement of optical power of the tested LEDs is also described. The method of measuring transfer transient thermal impedances between thermally coupled power LEDs using both set-ups is proposed. The measurement results of the mentioned parameters obtained with these set-ups for selected power LEDs are compared and discussed. Certain properties of software operating with both the considered measuring set-ups are also analyzed.
Highlights
IntroductionIn the case of power light emitting diodes (LEDs) the classical thermal resistance measurement method is described in the JEDEC norm [15]
This efficiency is characterised by such thermal parameters as the steady state thermal resistance Rth, transient thermal impedance Zth (t), and transfer transient thermal impedances Ztht (t) between the tested device and other devices thermally coupled with the tested one [7,8,9,10,11]
The results illustrating the properties of both measurement set-ups for the selected
Summary
In the case of power LEDs the classical thermal resistance measurement method is described in the JEDEC norm [15] This norm contains a description of measurement set-ups rendering possible the implementation of this method. The dedicated software provided with the considered measurement set-ups renders possible the estimation of compact thermal model parameters for the considered devices Such models have already been described in [6,12,18]. Paper [21] compares the results of measurements of transient thermal impedance of selected LEDs containing single semiconductor structures obtained with the use of both set-ups. The main part of the results describes thermal parameters of selected power LEDs. The obtained results of measurements are compared and the usefulness of both systems to perform measurements of thermal parameters of the considered class of semiconductor devices is evaluated. Some properties of the software dedicated for control of each of the considered set-ups are illustrated by computation results
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