Abstract
The available plasma chemistries for dry etching of In-containing III-V semiconductors used in long wavelength laser structures have been examined with respect to suitability for fabrication of thick photonic devices. Electron cyclotron resonance discharges of CH4/H2, Hl/H2, CH3l/H2 and Cl2/CH4/H2 at low pressure (1 mTorr) and low DC bias (-100 V) were characterized for InP etch rates, selectivity for etching the semiconductor over common masking material and changes to the electrical and structural properties of the etched surface. The Cl2/CH4/H2 chemistry provided the fastest etch rates but required sample temperatures of approximately=150 degrees C and dielectric masks. Microdisk lasers were fabricated to demonstrate the suitability of this plasma chemistry to photonic device processing.
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