Abstract

Abstract Experimental data measured by the Photo-Induced Current Transient Spectroscopy (PICTS), i.e. the temperature positions of maxima in PICTS spectra versus the time positions of boxcar gates, have been fitted within physical models with different stage of generalization. This procedure has been applied to several important deep levels observed in semiinsulating undoped and chromium doped GaAs crystals and the obtained results have been compared with each other.

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