Abstract
The performance of double-heterostructure GaAs/AlxGa1−xs phase modulators with different doping profiles are systematically compared. The largest phase modulation of l.75rad/V mm at a wavelength of 1.09μm was obtained with an active layer doped at n=3 × 1017cm−3. However, an intrinsic active layer gives the lowest characteristic modulation energy needed for high-frequency modulation.
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