Abstract
In many semiconductors and insulators electronic absorption occurs below the direct electron-energy gap, owing (we assume) to the interaction of electrons with optical phonons. In this paper we compare absorption coefficients, over a wide range of interaction strengths, calculated by two different prescriptions. The first method is a perturbative one, which takes into account only one-phonon processes, while the second is a nonperturbative method, which takes into account many-phonon processes.We find that for the (weak) interaction involved in InSb the two methods give essentially the same results for photon energies [Formula: see text] in the interval [Eg – kθ, Eg], where Eg is the energy gap and kθ is the optical phonon energy. For stronger interactions the perturbation results are nowhere applicable.
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