Abstract
AbstractAn Ohmic contact system comprising of Pd/Sn metallization has been developed for n-GaAs and compared with Pd/Sn/Au metallization. Surface morphology of the contacts is investigated using surface profilometry measurements and Scanning Electron Microscopy (SEM). The contact depth profiles are analyzed by Secondary Ion Mass Spectrometry (SIMS). Contact resistivities, Pc, of the proposed metallizations are measured using a conventional Transmission Line Model (TLM) method. A lowest ρc, of ∼2.07×10−5 Ω-cm2 was obtained with a Pd(50 nm)/Sn(125 nm) contact on 2×1018 cm−3 n-GaAs after annealing at 400 °C for 30 min. A Au overlayer improves the characteristics of the Pd/Sn contacts. The Pd(50 nm)/Sn(125 nm)/Au(100 nm) contact shows a lowest ρc of ∼1.29×10−6 Ω-cm2 after annealing at 330 °C for 30 min. The Pd/Sn/Au contacts exhibit superior properties compared to those of alloyed five-layer Au/Ge/Au/Ni/Au contacts.
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