Abstract
A difference between organic group V precursors, tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP), and hydride precursors, arsine (AsH3) and phosphine (PH3), was clarified in terms of their effect on the surface reaction rate constant ks of In and Ga precursors, by analyzing the growth rate profile of selectively grown films between SiO2 masks. When the organic precursor was used, the values of ks for In and Ga precursors were similar within a factor of 1.5 at 873 K. On the other hand, when the hydride precursor was used, the value of ks for the In precursor was larger than that for Ga by a factor of 9 at the same temperature. As a result, it was expected that the group III composition ratios, In/Ga, of ternary and quaternary films are expected to be nearly uniform in the selectively grown films with organic group V precursors, and that hydride precursor should cause a significant variation in In/Ga ratio. The selection of group V precursors was proved to be essential even for controlling the composition uniformity in selective-area metalorganic vapor phase epitaxy.
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