Abstract
InAs/GaAs quantum dots were grown by atmospheric pressure metalorganic vapor phase epitaxy in different technological conditions. A comparative study of influence of growth parameters on their optoelectronic properties was performed. It was found that the energy spectrum of InAs quantum dots grown in the regime with increased interruption time between chemical reagents flows has low sensitivity to the modifications of GaAs cladding layer thickness and the presence of InGaAs quantum well.
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