Comparison of optical, electrical, and surface characteristics of InGaN thin films at non-flow and small nitrogen flow cases

Asim Mantarcı

doi:10.1007/s11082-021-03203-4

Abstract

InGaN films in the non-flow and a small flow of nitrogen cases were fabricated by the RFMS (Radio Frequency Magnetron Sputter) method to compare crucial physical characteristics of its material. From the XRD analysis, application of small nitrogen flow in the InGaN thin film growth has been observed to result in changes in the crystal size, texture coefficient, and crystal structure parameters of the film. AFM results showed both films obtained have tightly packed granular, and almost homogeneous, and Nano-structural properties, but they are different in roughness, as increased by applying small nitrogen flow. Optical conductance peaks of the material in non-flow and small flow case were \(1.3957\times {10}^{10}\mathrm{ and }1.1496\times {10}^{10}(\mathrm{S}/\mathrm{m})\), showed a decrement in optical conductance by small nitrogen flow. In the same manner, electrical conductance peaks of the material in non-flow and small flow case were \(5.2512\times {10}^{12}\mathrm{ and }5.2236\times {10}^{12} (\mathrm{S})\), showed a decrement in electrical conductance by small nitrogen flow. In addition, the electrical conductivity of the InGaN material has been obtained at higher than the optical conductivity value of the InGaN material in both cases. Also, it was noticed that direct allowed optical band gap energy non-flow and small flow cases were 2.65 and 2.69 eV, displayed increased by applied small nitrogen flow. Essentially, many noteworthy physical properties such as crystalline size, texture coefficient, optical/electrical conductivity, the surface roughness of the films have been compared and studied for the non-flow and a small flow of nitrogen cases. Therefore; a better understanding of the structural/crystal and electrical characteristics of the InGaN film by applying/optimizing different growth conditions will be able to pave the way for InGaN device studies.

Highlights

InGaN (Indium Gallium Nitride) material, which is included in 3 nitride groups, has been used in device production that require high technology and has emitted from the ultraviolet to the green region (Dalapati et al 2020) (Smith et al 2020) (Alizadeh et al 2020) (Hu et al 2020) (Iyer et al 2020) (Chen et al 2020b) (Pasayat et al 2020)
InGaN films in the non-flow and a small flow of nitrogen cases were fabricated by the RFMS (Radio Frequency Magnetron Sputter) method to compare crucial physical characteristics of its material
From the XRD analysis, application of small nitrogen flow in InGaN thin film growth has been observed to result in changes in the crystal size, texture coefficient, and crystal structure parameters of the film

Summary

Introduction

InGaN (Indium Gallium Nitride) material, which is included in 3 nitride groups, has been used in device production (micro LEDs, solar water splitting, ultrasensitive strain sensor, etc.) that require high technology and has emitted from the ultraviolet to the green region (Dalapati et al 2020) (Smith et al 2020) (Alizadeh et al 2020) (Hu et al 2020) (Iyer et al 2020) (Chen et al 2020b) (Pasayat et al 2020). Studies (Yang et al 2017) in the literature have shown us that the electrical, optical and structural parameters of the InGaN material limit the efficiency of the material for many key parameters such as electron mobility (Gökden et al 2010) and photon absorption (Liu et al 2017). When the material is used in an optoelectronic device, the mentioned properties will affect the efficiency of the device For these reasons, investigating the changes in the structural, electrical and optical properties of the InGaN for different conditions will shed light on the studies to be carried out. The original aspect of this work is to understand and compare the effects of different conditions designed while producing the film on the key properties of the film: electrical conductivity, optical conductivity, optical band gap energy, crystal-structure parameters

Methods

Results

Conclusion