Abstract
The electrochemical etching of n-Si in a hydrofluoric solution in dimethylformamide under backside illumination has been experimentally studied. The dependences of the morphology of macropores being formed, porosity, etching rate, and effective valence on voltage and light intensity were examined. The results are compared with the data obtained under the same conditions in a H2O-based control electrolyte with the same hydrofluoric concentration. It is shown that the photoanodization in an organic electrolyte is characterized by intensive formation of secondary pores, rapid transition to electropolishing, and better conditions for separation of the porous layer from a substrate. Attention is given to the anodization in the breakdown mode, for which the difference from the aqueous electrolyte is the most pronounced. The thus formed layers have a higher porosity, lower pore growth rate, unusual orientation of secondary pores along the 〈1 1 1〉 crystallographic axis, and, under high-intensity illumination, large value of the effective valence.
Published Version
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