Abstract
We irradiated N- and P-type silicon with 1.5 MeV protons at fluences of 1012, 1013 and 1014 cm−2. After irradiation, the irradiated samples were studied by the spreading resistance method in order to determine the profiles of the defects before and after different thermal annealings. The measurements were performed as a function of annealing temperature and time. While P- and N-type silicon present the same behaviour after irradiation, many differences arise after annealing. In particular, the N-type samples show a conductivity layer at the end of the proton range (Rp) unlike the P-type samples.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
