Abstract
W/Pt contacted GaN Schottky diodes show forward current changes of >1 mA at low bias(3 V) in the temperature range 350–600 °C when the measurement ambient is changed from pure N 2 to 10%H 2/90%N 2. In this paper we show that use of a metal-oxide-semiconductor (MOS) diode structure with Sc 2O 3 gate dielectric and the same W/Pt metallization show these same reversible changes in forward current upon exposure to H 2-containing ambients over a much broader temperature range (90 to >625 °C). The increase in current in both cases is the result of a decrease in effective barrier height of the MOS and Schottky gates of 30–50 mV 10%H 2/90%N 2 ambients relative to pure N 2 and is due to catalytic dissociation of the H 2 on the Pt contact, followed by diffusion to the W/GaN or Sc 2O 3/GaN interface. The presence of the oxide lowers the temperature at the hydrogen which can be detected and in conjunction with the use of the high temperature stable W metallization enhances the potential applications of these wide bandgap sensors.
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