Abstract
Non-metallic polymer semiconductor graphite phase carbon nitride (g-C3N4) is a low-cost, environmentally friendly raw material with suitable bandgap width and stable chemical properties. However, there are still problems such as lower surface area, higher recombination rate of photo-excited charge carriers, and lower utilization rate of visible light. This paper introduces the structure, physicochemical properties, preparation methods, and modification ideas of graphite phase carbon nitride, focusing on several popular modification achievements in recent years, as well as a horizontal comparison of their respective production methods, mechanisms, and hydrogen production efficiency. Finally, the challenges and prospects in the modification of carbon nitride are discussed.
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