Abstract
AbstractLattice parameter and residual resistivity measurements were performed on high‐purity copper samples irradiated simultaneously with 2.6 MeV electrons at 6 K up to defect concentrations of about 0.1%. Lattice parameter changes could be measured with a resolution of Δa/a = 5 × 10−6. In six irradiations the ration η = (Δa/a)/Δϱ was determined as a function of defect concentration and thermal recovery. During defect production the ratio η amounts to (1.75 ± 0.10) × 103 (Ωcm)−1 and is independent of the defect concentration. Furthermore, the ratio η stays constant throughout the recovery stages I, II, and III.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
