Abstract
Megasonic and jet spray cleaning in single wafer process have been used for many years for removing particulate contaminants from wafer surface. These methods were alternately used during manufacturing process. As the design rule of novel devices shrinks to the nanometer scale, particle contaminations caused significant drop in product yield. To increase the particle removal efficiency (PRE), we optimized the cleaning methods for each material surface. These optimized methods were evaluated for aluminum surface cleaning in terms of the PRE and pattern damage. We observed that jet spray cleaning is more effective than megasonic cleaning process for aluminum surface layer. Similarly the PRE in jet spray is high as compared with megasonic due to the effect of CO2 dissolved DI water.
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