Abstract
Results from irradiated detector modules assembled with sensors made out of standard p-in-n FZ silicon will be presented. The modules were read out using LHC speed front-end electronics and characterised with different techniques. Two complementary methods to generate the charge inside the sensor were used: An IR laser set-up with a wavelength of λ = 982 nm and a β set-up utilising a 90 Sr source allowing for both relative and absolute CCE measurements. As the aim of our measurement programme is to develop silicon detectors able to operate at the sLHC, these modules were irradiated with three different fluences with the highest corresponding roughly to the fluence expectations for an LHC luminosity upgrade at a radial distance of r ≈ 35 cm [M. Huhtinen, First CMS Upgrade Workshop, CERN, February 26–27, 2004. 〈 http://agenda.cern.ch/fullAgenda.php?ida=a036368 〉 ]. The sensors were characterised before and after irradiation with 26 MeV protons. After irradiation the modules were stored at temperatures below - 40 ∘ C and operated at temperatures around - 5 ∘ C to limit the leakage current and annealing effects. The full depletion voltage V fd and the charge collection efficiency have been measured.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
