Abstract
Interfacial reactions and electrical properties of HfO2 and HfAlO high-k gate dielectric films on strained Si1−xGex (x=17%) fabricated by pulsed-laser deposition were investigated. The dielectric films were characterized by x-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. We found that alloying of HfO2 with alumina can reduce the GeOx formation at the interfacial layer and thus reduce the Ge diffusion during the film post-thermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.
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