Abstract
We report on the growth of InAs quantum dots (QDs) on GaInAsP and InPbuffers by metal–organic chemical vapour deposition on InP(100) substrates.Indium segregation and the As–P exchange reaction affect the QD nucleation andcomposition. The As–P exchange reaction has a more pronounced effect on the QDsgrown on the InP buffer than on those grown on the GaInAsP buffer. A verythin (0.6 nm) GaAs interlayer grown between the buffer layer and the InAs QDlayer consumes segregated indium and minimizes the As/P exchange reaction.Wavelength tuning from 1450 to 1750 nm covering the technologically important 1550 nmwavelength is also achieved for the InAs QDs grown with the thin GaAs interlayer.
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