Comparison of In doped and In, Pb co-doped Cd0.9Zn0.1Te

Abstract

In doped CdZnTe (CdZnTe:In) and In and Pb co-doped CdZnTe (CdZnTe:In,Pb) single crystals were comparatively studied by using thermally stimulated current (TSC) and photoluminescence (PL) measurements. The resistivity for both the wafers was found in the region of 109–1010Ωcm; however, In doped CdZnTe crystals had seven different traps, but In and Pb co-doped CdZnTe crystals had thirteen different traps. PL spectra showed that neutral acceptor exciton (A0, X) and neutral donor exciton (D0, X) had higher PL intensity for In and Pb co-doped CdZnTe crystals than in the case of CdZnTe: In, while the donor–acceptor pair (DAP) had lower PL intensity for In doped CdZnTe crystals than co-doped CdZnTe:(In,Pb). Channel numbers of CdZnTe:In were also found higher as compared to co-doped CdZnTe:(In,Pb). The comparative analysis showed that CdZnTe:In had better detector performance than co-doped CdZnTe:(In,Pb).