Abstract
Data on image shortening effects with patterns replicated with x-ray and optical lithography are presented. The x-ray exposures were performed at the IBM Advanced Lithography Facility using the Helios superconducting storage ring and a SUSS stepper. The optical exposures were performed using SVGL Micrascan 1 and 2 tools and biased optical masks. The results indicate that the image shortening effects using x-ray lithography (XRL) are considerably less pronounced than the effects observed with the optical tools. In addition, modeling of the image shortening effects for XRL using the xmas three-dimensional program for resist patterns is presented and compared with experimental results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
