Abstract
ZnO/Co3O4 materials with Type-I (straddling gap) heterojunction structure and ZnO/NiO materials with Type-II (staggered gap) heterojunction structure were prepared by electrostatic spinning-oxidation method. The influence of the type of heterojunction on the system was investigated by structure characterization and physical phase analysis. The results show that 550 °C was the optimal oxidation temperature for material preparation. The oxide particles can self-assemble to form fibers under this condition. The effect of photocatalytic degradation of humic acid in the system further proved that the materials with Type-II heterojunction structure possess higher degradation ability and cycle stability than Type-I heterojunction materials.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
