Abstract
A variety of lateral high-voltage devices has been investigated in the range of 200V to 300V applications in power ICs, including reduced surface electric field (RESURF), laterally double diffused MOS (LDMOS) transistor, lateral variation doping (LVD), vertical linear doping (VD) and linear thickness (LT) devices. These devices are described and compared on the basis of on-state, off-state breakdown voltages, on-state resistance (Rdson), safe operation area (SOA) and Baliga's Figure-Of-Merits (BFOM). It is observed that for devices operating lesser than 300V, the VD LDMOS exhibits superior performance, where as higher voltage devices (≧300 V), the LT device proves to be superior. Applications arround 200 V, the VD device exhibits only a marginal improvement over the LT LDMOS device.
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