Abstract
The aim of this study was to compare some differences between the growth rate, roughness and surface morphology of Cu and W layers. The growth of metal thin films was performed on silicon substrate. The layers were prepared by the pulsed laser deposition (PLD) using THG Nd:YAG laser at 355 nm. The number of laser pulses (time of deposition) varied from 1000 to 20000. The characteristics of the layers were examined using the methods of atomic force microscopy (AFM) and scanning electron microscopy (SEM). Results show that the growth rate of W is higher than Cu.
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