Abstract
High quality diamond epitaxial layers are prepared on polycrystalline and single-crystal diamonds by MPCVD. Field-effect transistors with gate length of 1μm are fabricated by self-aligned process on them. The surface p-type channel of the diamond films were obtained by microwave hydrogen plasma treatment. The DC and RF characteristics of the field-effect transistors are compared. The polycrystalline diamond FETs show better DC and small-signal performance. Single-crystal diamond FETs show higher breakdown voltage and output power density due to its high crystal quality. The maximum output power density reaches 320mW/mm and 450mW/mm@1GHz for the polycrystalline diamond and single crystal diamond transistors, respectively.
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