Abstract
Four different ‐based gases were examined for high rate inductively coupled plasma (ICP) etching of Si. Etch rates up to ∼8 μm/mi were achieved with pure discharges at high source power (1500 W) and pressure (35 mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order .This is in good correlation with the average bond energies of the gases, except for , which is the least strongly bound. Optical emission spectroscopy showed that the ICP source efficiently dissociated , but the etched Si surface morphologies were significantly worse with this gas than with the other three gases. © 1999 The Electrochemical Society. All rights reserved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
