Abstract
Several masks have been fabricated and exposed with the small-field Micro Exposure Tool (MET) at the Advanced Light Source (ALS) synchrotron in Berkeley using EUV radiation at 13.5 nm wavelength. Investigated mask types include two different absorber masks with TaN absorber as well as an etched multilayer mask. The resulting printing performance under different illumination conditions were studied by process window analysis on wafer level. Features with resolution of 60 nm and below were resolved with all masks. The TaN absorber masks with different stack thicknesses showed a similar size of process window. The differences in process windows for line patterns were analyzed for 60 nm patterns. The implications on the choice of optimum mask architecture are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
