Comparison of electronic stopping cross sections for channeled implantation of Al ions between the 〈0001〉 and 〈11 2¯ 3〉 directions in 4H-SiC

Abstract

Electronic stopping cross sections (S e) for channeled implantation of Al ions in 4H-SiC were compared between the 〈0001〉 and 〈11 2¯ 3〉 directions. We first modeled S e for random implantation (S e random) by combining the Firsov equation at an Al-ion energy E < 8.6 MeV with the constant (i.e. 4.22 × 10−13 eV cm2/atom) at E > 8.6 MeV. We then assumed S e for channeled implantation being k S e random and fitted k to the reported maximum channeled ranges of 18−20 MeV Al in 4H-SiC. The resultant k 〈112̄3〉 of 0.53 being smaller than k 〈0001〉 of 0.70 was consistent with the difference in the maximum impact parameters.