Abstract
A comparative study of the formation of defects on the surface of growing and formed lithium fluoride films under irradiation with low-energy electrons by total current spectroscopy has been carried out. It is shown that, in the post case, the aggregation of F2+-, F2-, F3-, and X-centres proceeds by coalescence of F-centres. In situ process, due to the renewal of the surface with a new layer, large defects are not observed, but a high concentration of laser color centers is formed. Electron irradiation and negative potential treatment during film growth can be used as a technology for producing epitaxial films with the (111) orientation.
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