Abstract
Electromigration lifetime is compared for SiO2-passivated 0.35 μm wide Al(Cu), and 0.90 μm Cu lines connected by four vias to underlying W lines using both drift velocity and resistance techniques. Void growth at the cathode was the primary cause of electromigration line failure. Activation energies for electromigration in Cu and Al(0.5%Cu) were found to be 1.22 eV and 1.06 eV, respectively. Values of the log-normal deviation, σ, of the time to failure for both Cu and Al(Cu) lines for these multi-stud test structures ranged from 0.4 to 1.
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