Abstract
Electromigration in wide Cu interconnections has been investigated for sample temperatures from 213 to . The effect of atomic-layer- or physical-vapor-deposited and physical-vapor-deposited Ta liner layers in Cu damascene lines on electromigration was also studied. A lower lifetime and activation energy for electromigration was observed in tested lines with sidewall voids. Similar electromigration lifetime and activation energy observed from samples with either atomic-layer- or physical-vapor-deposited suggested that the dominant diffusion paths in the Cu lines were not sensitive to the layer and were along the Cu/dielectric interface and/or grain boundaries.
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