Comparison of Electromagnetically Induced Transparency Performance in Metallic and All-Dielectric Metamaterials

Abstract

Analogs of Electromagnetically Induced Transparency (EIT) in metamaterial have undoubtedly become a research hotspot in recent years. In this paper, we summarized some of the literature on EIT published to date and compared their performance. Then, we designed two kinds of metamaterials using aluminum and silicon. Both have the similar glasses-shaped structure of a periodic lattice with one bar resonator and two split ring resonators. We analyzed and compared the EIT performance in the near infrared waveband of these two metamaterials. The metallic EIT metamaterials with large radiation loss and ohmic heat loss have a smaller Q-factor than the dielectric counterpart with less energy loss, while having a higher sensitivity toward the ambient refractive index. The Q-factor of our designed aluminum metamaterial and silicon metamaterial are 10.06 and 412.6, respectively. Their sensitivities are 1642.97 nm/RIU and 433.05 nm/RIU, respectively, which are higher than most of their counterparts in the same waveband in the other literature. For the application of slow light, the dielectric metamaterials with higher Q-factor are far superior to the metallic metamaterials in the same waveband and comparable propagation distance. The group index of the aluminum metamaterial is 42.9, and the group delay is 0.01 ps in the near infrared waveband. For the silicon metamaterial, the group index is approximately 1907.1, and the group delay is 0.89 ps within the transmission window in the near infrared waveband; these values are both higher than most counterparts in the same waveband in other literature. The EIT metamaterials that we designed have excellent performance, and to the best of our knowledge, this paper presents the first detailed comparison of EIT metamaterials made of dielectric and metal with similar structure; this paper may have certain instructive meaning for further research on metamaterial analogues of EIT in the future.