Abstract
Minority carrier (hole) lifetime investigations are conducted on identical 6H-SiC p+-n structures by electrical (reverse recovery, open circuit voltage decay) and optical (time-resolved photoluminescence) techniques. The p+-n diodes are fabricated by Al implantation. Depending on the particular analysis technique, the lifetime is determined either electrically in different regions of the p+-n diode or optically in the n-type 6H-SiC epilayer and results, therefore, in different values ranging from ≈10 ns to 2.5 µs.
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